Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC2778 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Mini type package, allowing downsizing of the equipment and automatic 1 insertion through the tape packing and the magazine packing. 0.55 Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10ìA, IE = 0 30 V Collector-emitter voltage VCEO IC = 2 mA, IB = 0 20 V Emitter-base voltage VEBO IE = 10ìA, IC = 0 5 VCE = 10 V, IC = 1 mA 70 fT VCB = 10 V, IE = -1 mA, f = 200 MHz 150 Cre VCB = 10 V, IE = -1 mA, f = 10.7 MHz Forward current transfer ratio hFE Transition frequency Reverse transfer capacitance V 250 230 MHz 1.3 pF hFE Classification Marking KB KC hFE 70 160 110 250 www.kexin.com.cn 1