Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO 120 V Collector-Base Voltage VCBO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Base Current IB 160 mA PC 500 PC * 1000 Tj 150 Tstg -55 to +150 Collector Power Dissipation Jumction temperature Storage temperature mW 2 * Mounted on a ceramic substrate (250 mm x 0.8 t) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Emitter Cut-off Current IEBO VEB = 5V , IC = 0 0.1 A Collector Cut-off Current ICBO VCB = 120V , IE = 0 0.1 A Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA , IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA , IC = 0 DC Current Gain Collector-Emitter Saturation Voltage hFE VCE = 5V , IC = 100mA V 5 V 80 240 VCE(sat) IC = 500mA , IB = 50mA Base-Emitter Voltage VBE VCE = 5V , IC = 500mA Transtion Frequency fT VCE = 5V , IC = 100mA Collector Output Capacitance 120 Cob VCB = 10V , IE = 0 , f = 1MHz 1 1 120 V V MHz 30 pF www.kexin.com.cn 1 Transistors SMD Type 2SC2881 hFE Classification C Marking Rank O Y hFE 80 160 120 240 Electrical Characteristics Curves 2 www.kexin.com.cn