KEXIN 2SC2983

Transistors
SMD Type
NPN Silicon Epitaxial Transistor
2SC2983
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
+0.25
2.65 -0.1
0.127
max
+0.28
1.50 -0.1
+0.1
0.80-0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High Transiton Frequency: Ft=100MHz(TYP.)
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
160
V
Collector to emitter voltage
VCEO
160
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
1.5
A
Base Current
IB
0.3
A
1
W
15
W
Total Power dissipation Ta = 25
PC
TC = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
collector cutoff current
ICBO
VCB=160V,IE=0
1
ìA
emitter cutoff current
IEBO
VEB=5V,IC=0
1
ìA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA,IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
DC current Gain
Collector-Emitter Saturation Voltage
160
IE=1mA,IC=0
5
hFE
VCE=5V,IC=100mA
70
VCE(sat)
IC=500mA,IB=50mA
V
V
240
1.5
Base- Emitter Voltage
VBE
VCE=5V,IC=500mA
Transition Frequency
fT
VCE=10V,IC=100mA
100
MHz
VCB=10V.IE=0,f=1MHz
25
pF
Collector Output Capacitance
cob
1
V
V
hFE Classification
Marking
O
Y
hFE
70 to 140
120 to 240
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