KEXIN 2SC3072

Transistors
SMD Type
Silicon NPN Epitaxial
2SC3072
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
High DC current gain.
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High power dissipation.
+0.15
0.50 -0.15
Low collector saturation voltage.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
Collector current
IC
5
A
Collector current pulse *
ICP
8
A
IB
0.5
A
1.0
W
10
W
Base current
Collector power dissipation
Ta = 25
PC
Tc = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
Emitter cut-off current
Testconditons
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 8 V, IC = 0
V(BR)CEO IC = 10 mA, IB = 0
Collector-emitter breakdown voltage
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter voltage
Max
Unit
100
nA
100
nA
20
VCE = 2 V, IC = 0.5A
140
VCE = 2 V, IC = 4A
70
V
450
1.0
V
VCE = 2 V, IC = 4 A
1.5
V
fT
Collector output capacitance
Typ
VCE (sat) IC = 4 A, IB = 0.1 A
VBE
Transition frequency
Min
Cob
VCE = 2 V, IC = 0.5 A
100
MHz
VCB = 10 V, IE = 0, f = 1 MHz
40
pF
hFE Classification
C3072
Marking
Rank
A
B
C
hFE
140 240
200 330
300 450
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