Transistors SMD Type Silicon NPN Epitaxial 2SC3074 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High speed switching time. 3 .8 0 Low collector saturation voltage. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB Collector power dissipation Ta = 25 PC Tc = 25 1 A 1.0 W 20 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC3074 Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 V(BR)CEO IC = 10 mA, IB = 0 hFE Min 70 VCE = 1 V, IC = 3 A 30 VCE (sat) IC = 3 A, IB = 0.15 A Base-emitter saturation voltage VBE (sat) fT Typ Max Unit 1 ìA 1 ìA 50 VCE = 1 V, IC = 1 A Collector-emitter saturation voltage Transition frequency V 240 0.2 0.4 V IC = 3 A, IB = 0.15 A 0.9 1.2 VCE = 4 V, IC = 1 A 120 MHz VCB = 10 V, IE = 0, f = 1 MHz 80 pF V Collector output capacitance Cob Turn-on time ton 0.1 ìs Storage time tstg 1 ìs tf 0.1 ìs Fall time hFE Classification C3074 Marking 2 Testconditons Rank O Y hFE 70 140 120 240 www.kexin.com.cn