Transistors IC SMD Type Silicon NPN Epitaxial 2SC3120 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V IC 50 mA Collector current Base current IB 25 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 30V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 2V, IC = 0 1.0 ìA Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 DC current gain hFE VCE = 10 V, IC = 5 mA Reverse Transfer Capacitance Cre VCB=10V, IE=0, f=1MHz Transition Frequency fT VCE = 10 V, IC = 2mA Conversion Gain Gce VCE = 10 V, IC = 2mA,f=800MHz Noise Figure NF FL=830MHz 15 40 V 100 200 0.6 0.9 pF 1500 2400 MHz 12 17 dB 8 dB Marking Marking HB www.kexin.com.cn 1