Transistors IC SMD Type Silicon NPN Epitaxial 2SC3121 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Exellent Linearity 0.55 High Transition Frequency :fT=1500MHz (Typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 25 mA Base current IB 50 mA Collector Power Dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 15V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 3V, IC = 0 1.0 ìA Collector-emitter breakdown voltage DC current gain Transition Frequency Conversion Output Capacitance Collector-Bace Time Constant V(BR)CEO IC=1mA,IB=0 15 V hFE VCE = 3 V, IC = 8 mA 60 150 fT VCE = 10 V, IC = 8mA 1100 1500 320 MHz Cob VCB=10V,IE=0mA,f=1MHZ 0.9 1.3 pF Cc.rbb2 VCB=10V,IC=8mA,f=30MHZ 7 12 ps Marking Marking HC www.kexin.com.cn 1