KEXIN 2SC3356

Transistors
SMD Type
NPN Silicon Epitaxial Transistor
2SC3356
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
High power gain.
0.55
NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
+0.1
1.3-0.1
+0.1
2.4-0.1
Low noise and high gain.
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
20
V
Collector to emitter voltage
VCEO
12
V
Emitter to base voltage
VEBO
3.0
V
Collector current (DC)
IC
100
mA
Total power dissipation
Ptot
200
mW
Tj
150
Tstg
-65 to +150
Junction temperature
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 10 V, IE = 0 mA
1.0
A
Emitter cutoff current
IEBO
VEB = 1.0 V, IC = 0 mA
1.0
A
DC current gain *
hFE
VCE = 10 V, IC = 20 mA
2
50
120
250
VCE = 10 V, IC = 20 mA, f = 1 GHz
11.5
Noise figure
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
1.1
2.0
dB
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0 mA, f = 1 MHz
0.55
1.0
pF
Insertion power gain
S21e
Transition frequency
VCE = 10 V, IC = 20 mA
fT
*. Pulse measurement: PW
350
s, Duty Cycle
7
dB
GHz
2%.
hFE Classification
Marking
R23
R24
R25
Rank
Q
R
S
hFE
50
100
80
160
125
250
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