Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB(f=500MHz) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 NF=1.5dB,|S21e|2=10.5dB(f=1GHz) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 17 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 70 mA Base current IB 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cut-off current ICBO VCB = 10 V, IE = 0 Emitter cut-off current IEBO VEB = 1V, IC = 0 DC current gain hFE VCE = 10 V, IC = 20mA Collecter Output Capacitance Cob Reverse Transfer Capacitance Cre Transition Frequency fT Insertion Gain VCB=10V,IE=0,f=1MHz Typ Max Unit 1 nA 1 nA 25 0.85 pF 0.57 pF VCE=10V.IC=20mA 5 GHz |S21e|2(1) VCE=10V.IC=20mA,f=500MHz 16 dB 2 |S21e| (2) VCE=10V.IC=20mA,f=1GHz Noise Figue Min 10.5 dB NF(1) VCE=10V.IC=5mA,f=500MHz 1.5 dB NF(2) VCE=10V.IC=5mA,f=1GHz 1.7 dB Marking Marking ME www.kexin.com.cn 1