KEXIN 2SC3496A

Transistors
SMD Type
NPN Silicon Triple Diffused Transistor
2SC3496A
+0.15
6.50-0.15
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
0.127
max
+0.25
2.65 -0.1
Satisfactory linearity of forward current transfer ratio hFE
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High collector-base voltage (Emitter open) VCBO
+0.15
0.50 -0.15
High-speed switching
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
1000
V
Collector-emitter voltage
VCES
1000
V
Collector-emitter voltage
VCEO
900
V
Emitter-base voltage (Collector open)
VEBO
7
V
IB
0.3
A
Collector current
IC
1
A
Peak collector current
ICP
2
A
Base current
Collector power dissipation
TC = 25
30
PC
W
1.3
Ta = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
900
Unit
Collector-emitter voltage
VCEO
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO
VCB = 1000 V, IE = 0
50
ìA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 7 V, IC = 0
50
ìA
Forward current transfer ratio
hFE
VCE = 5 V, IC = 0.05 A
6
VCE = 5 V, IC = 0.5 A
3
V
Collector-emitter saturation voltage
VCE(sat)
IC = 0.2 A, IB = 0.04 A
1.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 0.2 A, IB = 0.04 A
1.0
V
fT
VCE = 10 V, IC = 0.05 A, f = 1 MHz
Turn-on time
ton
IC = 0.2 A
1.0
ìs
Storage time
tstg
IB1 = 0.04 A, IB2 = -0.08 A
3.0
ìs
1
ìs
Transition frequency
Fall time
tf
VCC = 250 V
4
MHz
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