Transistors SMD Type High Voltage Control Applications 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Collector Current IC 100 mA Base Current IB 20 mA Collector Power Dissipation PC 500 PC * 1000 Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature Range mW 2 * mounted on a ceramic substrate (250 mm x 0.8 t) Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Symbol Testconditons ICBO VCB = 300V , IE = 0 IEBO VEB = 6V , IC = 0 Min Typ Max Unit 0.1 ìA 0.1 ìA Collector-base Breakdown Voltage V(BR)CBO IC = 0.1mA , IE = 0 300 V Collector-emitter Breakdown Voltage V(BR)CEO IC = 1mA , IB = 0 300 V DC Current Gain hFE VCE = 10V , IC = 20mA 30 150 Collector-Emitter Saturation Voltage VCE(sat) IC = 20mA , IB = 2mA 0.5 V Base-emitter Saturation Voltage VBE(sat) IC = 20mA , IB = 2mA 1 V Transition Frequency Collector Output Capacitance fT Cob VCE = 10V , IC = 20mA VCB = 20V , IE = 0 , f = 1MHz 50 80 3 MHz 4 pF www.kexin.com.cn 1 Transistors SMD Type 2SC3515 hFE Classification I Marking Rank hFE R 30 O 90 50 Electrical Characteristics Curves 2 www.kexin.com.cn 150 Transistors SMD Type 2SC3515 www.kexin.com.cn 3 Transistors SMD Type 2SC3515 4 www.kexin.com.cn