Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC3583 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF 1.2 dB TYP. @f = 1.0 GHz 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Ga 13 dB TYP. @f = 1.0 GHz 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 1.5 V Collector current Total power dissipation IC 65 mA Ptot 200 mW Tj 150 Tstg -65 to +150 Junction temperature Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 10 V, IE = 0 1.0 ìA Emitter cutoff current IEBO VEB = 1 V, IE = 0 1.0 ìA DC current gain *1 hFE VCE = 8 V, IC = 20 mA Gain bandwidth product fT VCE = 8 V, IC = 20 mA Feed-Back Capacitance Cre *2 VCB = 10 V, IE = 0, f = 1.0 MHz Insertion Power Gain | VCE = 8 V, IC = 20 mA, f = 1.0 GHz Maximum Available Gain Noise Figure *1.Pulse Measurement PW 50 100 250 9 0.35 11 GHz 0.9 13 MAG VCE = 8 V, IC = 20 mA, f = 1.0 GHz 15 NF VCE = 8 V, IE = 7 mA, f = 1.0 GHz 1.2 pF dB dB 2.5 dB 350ìs, Duty Cycle 2 % *2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Marking R33 R34 R35 Rank R33/Q R34/R R35/S hFE 50 100 80 160 125 250 www.kexin.com.cn 1