KEXIN 2SC3651

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistors
2SC3651
Features
High DC current gain
High breakdown voltage
Low colleotor-to- emitter saturation voltage
High VEBO (VEBO
15V)
Very small size making it easy to provide high-density
small-sized hybrid IC's.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
collector-base voltage
Parameter
VCBO
120
V
collector-emitter voltage
VCEO
100
V
emitter-base voltage
VEBO
15
V
collector current
IC
200
mA
Collector Current (pulse)
ICP
300
mA
Collector Dissipation
PC
500
mA
1.3 *
W
Junotion Temperature
TJ
150
storage Temperature
Tstg
-55 to 150
*Mounted on ceramic board (250mm2X0.8mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
collector cutoff Current
ICBO
VCB=80V,IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB=10V,IC=0
0.1
ìA
DC Current Gain
hFE
VCE=5V,IC=10mA
500
VCE=5V,IC=100mA
400
1000
2000
fT
VCE=10V,IC=10mA
150
MHz
cob
VCB=10V,f=1MHz
6.5
pF
Collector to Emitter Saturation Voltage
VCE(sat)
IC=100mA,IB=2mA
0.15
Base to Emitter Stauration Voltage
VBE(sat)
IC=100mA,IE=2mA
V
V
Gain-Bandwidth product
Output Capacitance
0.5
V
Collector to Base Breakdown Voltage
V(BR)CBO
IC=100ìA,IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC=1mA,IB=0
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=10ìA,IC=0
V
Marking
Marking
CG
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