Transistors IC SMD Type Silicon NPN Epitaxial Planar 2SC3929 Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 35 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Peak collector current ICP 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 35 V Collector-emitter voltage VCEO IC = 2 mA, IB = 0 35 V 5 Emitter-base voltage VEBO IE = 10 ìA, IC = 0 Base-emitter voltage VBE VCE = 1 V, IC = 100 mA Collector-base cutoff current ICBO VCB = 10 V, IE = 0 Collector-emitter cutoff current ICEO VCE = 10 V, IB = 0 Forward current transfer ratio hFE VCE = 5 V, IC = 2 mA V 0.7 180 Transition frequency VCB = 5 V, IE = ?2 mA, f = 200 MHz fT Noise voltage VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg = 100 kÙ, Function = FLAT NV V 0.1 ìA 1 ìA 700 VCE(sat) IC = 100 mA, IB = 10 mA Collector-emitter saturation voltage 1.0 0.6 100 V MHz 150 mV hFE Classification Marking SR SS ST hFE 180 360 260 520 360 700 www.kexin.com.cn 1