KEXIN 2SC4209

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC4209
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
IC
300
mA
Collector current
Base current
IB
60
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Testconditons
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V(BR)CEO IC = 5mA , IB = 0
DC current gain
hFE
Collector-emitter saturation voltage
VCE = 2 V, IC = 50 mA
Min
Typ
VBE
Transition frequency
fT
Collector output capacitance
Cob
VCE = 2 V, IC = 5 mA
Unit
0.1
ìA
0.1
ìA
80
V
70
240
0.5
V
0.55
0.8
V
VCE (sat) IC = 200 mA, IB = 10 mA
Base-emitter voltage
Max
VCE = 10 V, IC = 10 mA
100
MHz
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
hFE Classification
C
Marking
Rank
O
Y
hFE
70 140
120 240
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