Transistors IC SMD Type Silicon NPN Epitaxial 2SC4253 Features Good linearity of fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 30 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 3 V, IC = 0 0.1 ìA Collector-emitter breakdown voltage DC current gain Testconditons V(BR)CEO IC = 1 mA, IB = 0 hFE VCE = 10 V, IC = 10 mA Collector-emitter saturation voltage VCE(sat) IC = 15 mA, IB = 1.5mA Base-emitter saturation voltage VBE(sat) IC = 15 mA, IB = 1.5mA Collector output capacitance Cob Collector-base time constant Cc.rbb' Transition frequency fT Min Typ 25 20 V 70 0.2 VCB = 10 V, IE = 0, f = 1MHz 1.1 VCB = 10 V, IC = 1mA, f = 30MHz VCE = 10 V, IC = 10 mA 200 250 600 V 1.5 V 1.6 pF 25 ps MHz Marking Marking HH www.kexin.com.cn 1