Transistors SMD Type Silicon NPN Triple Diffused 2SC4499S TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High speed and high voltage switching 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current ICP 0.5 A Collector peak current IC 1 A 0.75 W 10 W Collector power dissipation PC TC=25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max V 10 V VCEO(sus) IC = 0.1 A, RBE = Emitter to base breakdown voltage V(BR)EBO IE = 10 mA, IC = 0 ICBO VCB = 400 V, IE = 0 20 ICEO VCE = 350 V, RBE = 50 Collector cutoff current DC current transfer ratio hFE ,L = 100 mH VCE = 5 V, IC = 0.25 A*1 12 VCE = 5 V, IC = 0.5 A*1 5 Collector to emitter saturation voltage VCE(sat) IC = 0.25 A, IB = 0.05 A*1 Base to emitter saturation voltage VBE(sat) Unit 400 Collector to emitter sustain voltage 1.0 ìA V IC = 0.25 A, IB = 0.05 A*1 1.5 V Turn on time ton IC = 0.5 A, IB1 = -IB2 = 0.1 A, 1.0 ìs Storage time tstg VCC= 150 V 2 ìs 1.0 ìs Fall time tf * 1 Pulse test. www.kexin.com.cn 1