Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SC5063 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High-speed switching +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Wide area of safe operation (ASO) +0.15 0.50 -0.15 +0.2 9.70 -0.2 High collector to base voltage VCBO 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VCBO 500 V VCES 500 V Collector to base voltage Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 3 A Collector current IC 1.5 A Base current IB 0.5 A Collector power dissipation TC=25 25 PC W 1.3 Ta=25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter ICBO VCB = 500V, IE = 0 100 ìA Emitter cutoff current IEBO VEB = 5V, IC = 0 100 ìA Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 VCE = 5V, IC = 0.1A 15 VCE = 5V, IC = 0.8A 8 Forward current transfer ratio Symbol hFE Testconditons Collector to emitter saturation voltage VCE(sat) IC = 0.8A, IB = 0.16A Base to emitter saturation voltage VBE(sat) IC = 0.8A, IB = 0.16A Transition frequency fT VCE = 10V, IC = 0.2A, f = 10MHz Turn-on time ton IC = 0.8A, IB1 = 0.16A, IB2 = -0.32A, Storage time tstg VCC = 150V Fall time tf Min Typ V 1 1.5 25 V V MHz 0.7 2 ìs 0.3 www.kexin.com.cn 1