Transistors SMD Type Small Signal Transistor 2SC5211 Features High voltage VCEO=50V. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Collector-base voltage VCBO 55 V Emitter-base voltage VEBO 4 V Collector-emitter voltage VCEO 50 V Peak collector current ICM 600 mA Collector current IC 400 mA Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Unit Electrical Characteristics Ta = 25 Parameter Symbol Colllector-base breakdown voltage Testconditons V(BR)CBO IC=10ìA,IE=0 Min Typ Max Unit 55 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA,IC=0 4 V Collector-emitter breakdown voltage V(BR)CEO IC=100ìA,RBE= 50 V Collector cutoff current ICBO VCB=25V,IE=0 Emitter cutoff current IEBO VEB=2V,IC=0 DC current gain hFE VCE=4V,IC=100mA VCE(sat) IC=200mA,IB=10mA Collector-emitter saturation voltage Gain bandwidth product fT VCE=6V,IE=-10mA 90 1 ìA 1 ìA 500 0.15 150 0.5 V MHz hFE Classification Marking TD TE TF hFE 90 180 150 300 250 500 www.kexin.com.cn 1