Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1007 Features High collector to emitter voltage: VCEO 120V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V IC 0.7 A Collector current (pulse) * IC (pu) 1.2 A Collector power dissipation Pc 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current *. PW 10ms,duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ 550 620 Max Unit Base-emitter voltage * VBE VCE =10V , IC = 10mA 650 mV Collector cutoff current ICBO VCB = 120V, IE=0 100 nA Emitter cutoff current IEBO VEB = 5V, IC=0 100 nA DC current gain * hFE VCE =1V , IC = 5.0mA 45 200 VCE =1V , IC = 100mA 90 200 400 Collector-emitter saturation voltage * VCE(sat) IC = 500mA , IB = 50mA 0.3 0.6 Base-emitter saturation voltage * VBE(sat) IC = 500mA , IB = 50mA 0.9 1.5 Output capacitance Cob Transition frequency fT *. PW V V VCB = 10V , IE = 0 , f = 1.0MHz 10 pF VCE = 10V , IE = -10mA 90 MHz 350ìs,duty cycle 2% hFE Classification Marking HR HQ HP hFE 90 180 135 270 200 400 www.kexin.com.cn 1