KEXIN 2SD1280

Transistors
SMD Type
Silicon NPN Epitaxial Planar Type
2SD1280
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency
with the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
2
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter voltage
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
5
V
Collector-base cutoff current
ICBO
VCB = 10 V, IB = 0
Forward current transfer ratio
hFE
VCE = 2 V, IC = 0.5 A
90
VCE = 2 V, IC = 1.5 A
50
Collector-emitter saturation voltage
VCE(sat) IC = 1 A, IB = 50 mA
Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
Transition frequency
fT
Collector output capacitance
Cob
1
ìA
280
0.5
1.2
V
V
VCB = 6 V, IE = -50 mA, f = 200 MHz
150
MHz
VCB = 6 V, IE = 0, f = 1 MHz
18
pF
hFE Classification
R
Marking
Rank
Q
R
S
hFE
90 155
130 210
180 280
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