Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1420 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V IC 1.5 A iC(peak)*1 3 A W Collector current Collector peak current PC*2 1 Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Collector power dissipation *1 PW 10ms, duty cycle 20% *2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 1 mA, IE = 0 180 V Collector to emitter breakdown voltage V(BR)CEO IC = 10mA, RBE = 120 V Emitter to base breakdown voltage V(BR)EBO IE= 1mA, IC = 0 5 V Collector cutoff current VCB = 160 V, IE = 0 ICBO hFE DC current transfer ratio Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE 10 VCE = 5 V, IC = 0.15A 60 VCE = 5 V, IC = 0.5A 30 ìA 320 IC = 0.5A, IB = 50 mA,pulse 1.0 V VCE = 5 V, IC = 0.15mA,pulse 0.9 V hFE Classification Marking EA EB hFE 60 120 100 200 EC 160 320 www.kexin.com.cn 1