Transistors IC SMD Type Medium Power Transistor 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC 0.8 Collector current * ICP 1.5 Collector power dissipation PC 200 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 A mW * Single pulse Pw=100ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 40 V Collector-emitter breakdown voltage BVCEO IC=1mA 32 V Emitter-base breakdown voltage BVEBO IE=50ìA 5 V Collector cutoff current ICBO VCB=20V 0.5 ìA Emitter cutoff current IEBO VEB=4V 0.5 ìA 0.4 V VCE(sat) IC/IB=500mA/50mA Collector-emitter saturation voltage DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=3V, IC=100mA 0.1 120 390 VCE=5V, IE= -50mA, f=100MHz 150 MHz VCB=10V, IE=0A, f=1MHz 15 pF hFE Classification AF Marking Rank Q R hFE 120 270 180 390 www.kexin.com.cn 1