KEXIN 2SD1782K

Transistors
IC
SMD Type
Power Transistor
2SD1782K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA
0.4
3
1
0.55
High VCEO, VCEO=80V.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
80
V
Collector-emitter breakdown voltage
BVCEO
IC=2mA
80
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
5
V
Collector cutoff current
ICBO
VCB=50V
0.5
ìA
Emitter cutoff current
IEBO
VEB=4V
0.5
ìA
0.5
V
VCE(sat) IC/IB=500mA/50mA
Collector-emitter saturation voltage
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
VCE=3V, IC=100mA
0.2
120
390
VCE=10V, IE= -50mA, f=100MHz
120
MHz
VCB=10V, IE=0, f=1MHz
7.5
pF
hFE Classification
AJ
Marking
Rank
Q
R
hFE
120 270
180 390
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