KEXIN 2SD1824

Transistors
SMD Type
Silicon NPN Epitaxial Planar Type
2SD1824
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
High emitter-base voltage VEBO
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
15
V
Peak collector current
ICP
50
mA
Collector current
IC
20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = 10 ìA, IE = 0
100
V
Collector-emitter voltage
VCEO
IC = 1 mA, IB = 0
100
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
15
Collector-base cutoff current
ICBO
VCB = 60 V, IE = 0
0.1
ìA
Collector-emitter cutoff current
ICEO
VCE = 60 V, IB= 0
1
ìA
hFE
VCE = 10 V, IC = 2 mA
Forward current transfer ratio
VCE(sat) IC = 10 mA, IB = 1 mA
Collector-emitter saturation voltage
Transition frequency
fT
VCB = 10 V, IE = -2 mA, f = 200 MHz
V
400
1200
0.05
90
0.2
V
MHz
hFE Classification
1V
Marking
Rank
R
S
hFE
400 800
600 1200
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