KEXIN 2SD2167

Transistors
SMD Type
Power Transistor
2SD2167
Features
Built-in zener diode between collector and base.
Zener diode has low voltage dispersion.
Strong protection against reverse power surges due
to low loads.
PC=2 W (on 40 40 0.7mm ceramic board) .
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
31 4
V
Collector-emitter voltage
VCEO
31 4
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector power dissipation
IC
PC
2
A
DC)
3
A(Pulse)*1
0.5
W
2
W *2
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 Pw=20ms , duty=1/2
*2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
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1
Transistors
SMD Type
2SD2167
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Max
Unit
BVCBO
IC=50ìA
27
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
27
V
Emitter-base breakdown voltage
5
BVEBO
IE=50ìA
Collector cutoff current
ICBO
VCB=20V
1
ìA
Emitter cutoff current
IEBO
VEB=5V
1
ìA
1
V
0.5
V
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
hFE Classification
DL
Marking
Rank
N
P
Q
hFE
56 120
82 180
120 270
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V
IC=2A, IB=0.2A
IC=1A, IB=50mA
2
Typ
Collector-base breakdown voltage
VCE=3V, IC=0.5A
0.25
56
270
VCE=3V, IE= -0.5A, f=30MHz
100
MHz
VCB=10V, IE=0A, f=1MHz
25
pF