Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2210 Features Low collector-emitter saturation voltage VCE(sat) Low on resistance ron. High forward current transfer ratio hFE. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V Collector current IC 1 A Peak collector current ICP 0.5 A W Collector power dissipation PC 1 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SD2210 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit 1 ìA Collector-base cutoff current ICBO VCB = 25 V, IE = 0 Collector-base voltage VCBO IC = 10 ìA, IE = 0 25 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 12 VCE = 2 V, IC = 0.5 A 200 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) IC = 0.5 A, IB = 20 mA Base-emitter saturation voltage VBE(sat) IC = 0.5 A, IB = 20 mA Transition frequency fT Collector output capacitance Cob ON resistance Ron 0.4 1.2 V V MHz VCB = 10 V, IE = 0, f = 1 MHz 10 pF 1.0 Ù Rank R S T hFE 200 350 300 500 400 800 www.kexin.com.cn 0.13 200 IK Marking V 800 VCB = 10 V, IE = -50 mA, f = 200 MHz hFE Classification 2 Min