KEXIN 2SD2357

Transistors
SMD Type
Silicon NPN Epitaxial Planar Type
2SD2357
Features
Low collector-emitter saturation voltage VCE(sat).
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
10
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.2
A
Peak collector current
ICP
1
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-base cutoff current
ICBO
VCB = 7 V, IE = 0
Min
Typ
Max
Unit
1
ìA
Collector-base voltage
VCBO
IC = 10 ìA, IE = 0
10
V
Collector-emitter voltage
VCEO
IC = 1 mA, IB = 0
10
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
5
V
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
hFE
fT
Collector output capacitance
VCE = 2 V, IC = 100 mA
200
800
VCE(sat) IC = 500 mA, IB = 5 mA
Cob
0.15
V
VCB = 5 V, IE = -50 mA, f = 200 MHz
120
MHz
VCB = 5 V, IE = 0, f = 1 MHz
30
pF
Marking
Marking
1M
www.kexin.com.cn
1