Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2359 Features Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 1.2 A Peak collector current ICP 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit 1 ìA Collector-base cutoff current ICBO VCB = 14 V, IE = 0 Collector-base voltage VCBO IC = 10 ìA, IE = 0 20 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 Forward current transfer ratio Collector-emitter saturation voltage Transition frequency hFE VCE(sat) IC = 500 mA, IB = 10 mA fT Collector output capacitance VCE = 2 V, IC = 100 mA Cob 5 V 200 800 0.11 0.2 V VCB = 6 V, IE = -50 mA, f = 200 MHz 100 MHz VCB = 6 V, IE = 0, f = 1 MHz 23 pF Marking Marking 1O www.kexin.com.cn 1