Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2457 Features High collector-emitter voltage (Base open) VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 3 A Peak collector current ICP 1.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit ìA Collector-base cutoff current ICBO VCB = 20 V, IE = 0 1 Collector-emitter cutoff current ICEO VCE = 10 V, IB = 0 100 ìA Emitter-base cutoff current IEBO VEB = 5 V, IC = 0 10 ìA Collector-base voltage VCBO IC = 1 mA, IE = 0 Collector-emitter voltage VCEO IC = 2 mA, IB = 0 40 VCE = 5 V, IC = 1 A 80 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) IC = 1.5 A, IB = 0.15 A Base-emitter saturation voltage VBE(sat) IC = 2 A, IB = 0.2 A Transition frequency fT Collector output capacitance Cob 50 V V 120 220 1 1.5 V V VCB = 5 V, IE = -0.5 A, f = 200 MHz 150 MHz VCB = 20 V, IE = 0, f = 1 MHz 45 pF hFE Classification 1Y Marking Rank Q R hFE 80 160 120 220 www.kexin.com.cn 1