Transistors SMD Type Silicon NPN epitaxial planer type 2SD2459 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A PC* 1 W Tj 150 Tstg -55 to +150 Collector power dissipation Junction temperature Storage temperature 2 * Printed circuit board: Copper foil area of 1cm or more, and the board thickness of 1.7mm for the collector portion www.kexin.com.cn 1 Transistors SMD Type 2SD2459 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit 0.1 ìA Collector cutoff current ICBO VCB = 75V, IE = 0 Collector to base voltage VCBO IC = 10ìA, IE = 0 150 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 150 V Emitter to base voltage VEBO Forward current transfer ratio hFE IE = 10ìA, IC = 0 5 VCE = 2V, IC = 100mA 120 VCE = 2V, IC = 500mA 40 V 340 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 25mA* 0.11 0.3 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 25mA* 0.8 1.2 V VCB = 10V, IE = -50mA, f = 200MHz 90 VCB = 10V, IE = 0, f = 1MHz 12 Transition frequency fT Collector output capacitance Cob * Pulse measurement hFE Classification 2 Testconditons Marking 2ER 2ES Rank R S hFE 120 240 170 340 www.kexin.com.cn MHz 20 pF