Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD874,2SD874A Features Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat). Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol 2SD874 VCBO Unit 30 V 2SD874A 60 V 2SD874 25 V 50 V VCEO 2SD874A Emitter-base voltage Rating VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SD874,2SD874A Electrical Characteristics Ta = 25 Parameter Symbol 2SD874 Collector-base voltage Testconditons IC = 10 ìA, IE = 0 VCBO 2SD874A 2SD874 Collector-emitter voltage VCEO IC = 2 mA, IB = 0 2SD874A Emitter-base voltage VEBO IE = 10ìA, IC = 0 Collector-base cutoff current ICBO VCB = 20 V, IB = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 500 mA Typ Max 30 V V 25 V 50 V 5 V 85 0.1 ìA 340 ? V VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.2 VCB = 10 V, IE = -50 mA, f = 200 MHz fT Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz hFE Classification 2SD874:Z, 2SD874A:Y Marking Rank Q R S hFE 85 170 120 240 170 340 www.kexin.com.cn Unit 60 Collector-emitter saturation voltage Transition frequency 2 Min 200 V MHz 20 pF