Transistors SMD Type NPN Silicon Power Transistor 2SD882 Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current to Continuous IC 3 A Collector Dissipation Pc 0.5 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=100uA ,IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 10 mA , IB=0 30 V Emitter-base breakdown voltage VEBO IE= 100 uA ,IC=0 6 V Collector cut-off current ICBO VCB=40 V , IE=0 1 uA Collector cut-off current ICEO VCE=30 V , IB=0 10 uA Emitter cut-off current IEBO VEB=6V , IC=0 1 uA DC current gain hFE VCE= 2V, IC= 1A 60 VCE=2V, IC= 100mA 32 400 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V Transition frequency fT VCE=5 V, IC=0.1mA,f = 10MHz 50 MHz hFE Classification Rank R O P E hFE 60 120 100 200 160 320 200 400 www.kexin.com.cn 1