IC MOSFET SMD Type MOS Field Effect Power Transistors 2SJ325 TO-252 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 (VGS=-4V,ID=-1.6A) Built-in G-S Gate Protection Diode +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)=0.15 Unit: mm +0.1 2.30-0.1 +0.25 2.65-0.1 (VGS=-10V,ID=-2A) +0.15 0.50-0.15 RDS(on)=83m +0.2 9.70-0.2 Low on-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.28 1.50-0.1 Features 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS -30 V Gate to source voltage (DC) VGSS -20,+10 V Gate to source voltage (AC) VGSS 20 V Drain current (DC) ID 4.0 A Drain current(pulse) * ID 16 A TC=25 Power dissipation PD TA=25 20 W 1.0 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d 1%. www.kexin.com.cn 1 MOSFET IC SMD Type 2SJ325 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=-30V,VGS=0 IGSS VGS= Min Typ 16V,VDS=0 -1.0 -1.5 VDS=-10V,ID=-2.0A 3.0 4.2 RDS(on) Unit -10 A 10 VGS(off) VDS=-10V,ID=-1mA Yfs Max -2.0 S VGS=-10V,ID=-2.0A 0.18 0.11 VGS=-4V,ID=-1.6A 0.15 0.24 Ciss VDS=-10V,VGS=0,f=1MHZ A V 800 pF Output capacitance Coss 600 pF Reverse transfer capacitance Crss 250 pF Turn-on delay time td(on) 15 ns 65 ns 85 ns 60 ns 28 nC 3 nC 11 nC Rise time Turn-off delay time Fall time Total Gate Charge 2 Symbol tr td(off) tf Qg Gate to Source Charge QGS Gate Drain Charge QGD Body Diode Forward Voltage VF Reverse Recovery time trr Reverse Recovery Charge Qrr www.kexin.com.cn VGS(on)=-10V,VDD=-15V,ID=--2A RL=7.5 ,RG=10 VGS=-10V,ID=-4.0A,VDD=-24V IF=4.0A,VGS=0 IF=4.0A,VGS=0,di/dt=50A/ s 0.9 V 65 ns 60 nC