IC MOSFET SMD Type SMDType Silicon P-Channel MOSFET 2SJ387S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3.80 +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 Suitable for Switching regulator, DC - DC converter +0.15 0.50-0.15 +0.2 9.70-0.2 2.5 V Gate drive device can be driven from 3 V Source +0.15 5.55-0.15 Low drive current 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS -20 V Gate to source voltage VGSS 10 V Drain current (DC) ID -10 A Drain current(pulse) * ID -40 A W Power dissipation PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d 1%. www.kexin.com.cn 1 IC MOSFET SMD Type SMDType 2SJ387S Electrical Characteristics Ta = 25 Parameter Testconditons Drain to source breakdown voltage VDSS ID=-10mA,VGS=0 Gate to source breakdown voltage VGSS IG = Drain cut-off current IDSS VDS=-16V,VGS=0 Gate leakage current IGSS VGS= Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance 200 A ,VDS=0 RDS(on) Typ VDS=-10V,ID=-5A Max -20 V -100 10 -0.5 7 Unit V 10 6.5V,VDS=0 VGS(off) VDS=-10V,ID=-1mA Yfs Min -1.5 12 A A V S VGS=-4V,ID=-5A 0.05 0.07 VGS=-2.5V,ID=-5A 0.07 0.1 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) 20 ns tr 325 ns td(off) 350 ns Rise time Turn-off delay time Fall time VDS=-10V,VGS=0,f=1MHZ VGS(on)=-4V,ID=--5A RL=2 1170 pF 860 pF 310 pF tf 425 ns Total Gate Charge Qg 6.5 nC Gate to Source Charge Qgs VGS=-10V,ID=-1A,VDD=-48V 4.5 nC 2.0 nC IF=-10A,VGS=0 -1.0 V IF=-10A,VGS=0,diF/dt=20A/ s 240 ns Gate Drain Charge Qgd Body to drain diode forward voltage VDF Body to drain diode reverse recovery time 2 Symbol www.kexin.com.cn trr