IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1838S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switchingregulator, DC-DC converter +0.1 0.60-0.1 2.3 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 No secondary breakdown +0.15 0.50-0.15 +0.2 9.70-0.2 Low drive current 3.80 High speed switching 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 250 V Gate to source voltage VGSS 30 V Drain current ID 1 A Power dissipation PD 10 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle 5% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain source breakdown voltage VDSS Gate to source breadown voltage VGSS ID= 100 Drain cut-off current IDSS VDS=200V,VGS=0 Gate leakage current IGSS VGS= 25V,VDS=0 Yfs VDS=10V,ID=0.5A Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss Coss Reverse transfer capacitance Turn-on delay time Turn-off delay time Fall time A,VDS=0 RDS(on) VGS=10V,ID=0.5A Output capacitance Rise time ID=10mA,VGS=0 Min Typ Max Unit 250 V 30 V 100 10 0.3 0.5 5.5 A A S 8.0 60 pF 30 pF Crss 5 pF td(on) 5 ns tr 6 ns 10 ns 4.5 ns td(off) tf VDS=10V,VGS=0,f=1MHZ ID=0.5A,VGS(on)=10V,RL=60 www.kexin.com.cn 1