KEXIN 2SK2059S

IC
MOSFET
SMD Type
Silicon N-Channel MOSFET
2SK2059S
TO-252
Features
Low on-resistance
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
High speed switching
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
+0.2
9.70-0.2
Suitable for Switching regulator, DC - DC converter
+0.15
0.50-0.15
No Secondary Breakdown
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
Drain current
ID
3
A
Power dissipation
PD
20
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=500V,VGS=0
Gate leakage current
IGSS
VGS= 25V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Min
2.0
VDS=10V,ID=10A
1.2
Yfs
Ciss
VDS=10V,VGS=0,f=1MHZ
Max
Unit
100
A
10
VGS(off) VDS=10V,ID=1mA
RDS(on) VGS=10V,ID=1A
Typ
3.0
2.0
3.8
A
V
S
5.0
295
pF
Output capacitance
Coss
70
pF
Reverse transfer capacitance
Crss
12
pF
Turn-on delay time
td(on)
8
ns
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
ID=1A,VGS(on)=10V,RL=30
25
ns
65
ns
30
ns
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