IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2084S Features TO-252 Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low drive current 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15 0.50-0.15 +0.2 9.70-0.2 Suitable for Switching regulator, DC - DC converter 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 20 V Drain current ID 7 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=16V,VGS=0 Gate leakage current IGSS VGS= 16V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Input capacitance Ciss Output capacitance Coss VDS=10V,ID=4A Min Typ 1.0 5 Max Unit 100 A 10 A 2.5 9 S VGS=10V,ID=4A 0.04 VGS=4V,ID=4A 0.058 0.075 VDS=10V,VGS=0,f=1MHZ V 0.053 800 pF 680 pF Reverse transfer capacitance Crss 165 pF Turn-on delay time td(on) 15 ns 60 ns Rise time Turn-off delay time Fall time tr td(off) tf ID=4A,VGS(on)=10V,RL=5 100 ns 80 ns www.kexin.com.cn 1