IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2094 Features TO-252 Low on-resistance Fast switching speed +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low-voltage drive 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15 0.50-0.15 +0.2 9.70-0.2 Easily designed drive circuits 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 60 Gate to source voltage VGSS ID Drain current Unit V 20 V 2 A Idp 8 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS Gate leakage current IGSS VGS= 20V,VDS=0 VGS(th) VDS=10V,ID=1mA 1.0 VDS=10V,ID=1A 1.0 Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Typ VDS=60V,VGS=0 Max 100 100 2.5 Unit A nA V S VGS=10V,ID=1A 0.3 0.35 VGS=4V,ID=1A 0.4 0.5 400 pF 150 pF Crss 50 pF td(on) 10 ns tr 20 ns 100 ns 40 ns td(off) tf VDS=10V,VGS=0,f=1MHZ ID=1A,VGS(on)=10V,RL=30 ,RG=10 www.kexin.com.cn 1