IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2796S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.12 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15 0.50-0.15 +0.2 9.70-0.2 High speed switching 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS Drain current 20 ID 5 A Idp * 20 A W Power dissipation PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW V 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Drain source breakdown voltage VDSS ID=10mA,VGS=0V Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 16V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Testconditons VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS=10V,ID=3A Min Typ Max 60 V 10 10 1.0 2.5 2.0 4.0 A A V S VGS=10V,ID=3A 0.12 0.16 VGS=4V,ID=3A 0.16 0.25 VDS=10V,VGS=0,f=1MHZ Unit 180 pF 90 pF 30 pF Turn-on delay time ton 9 ns Rise time tr 25 ns Turn-off delay time toff 35 ns Fall time tf 55 ns ID=3A,VGS(on)=10V,RL=10 www.kexin.com.cn 1