Transistors IC SMD Type MOS Field Effect Transistor 2SK3325 TO-263 1 .2 7 -0+ 0.1.1 Features Low gate charge: Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low on-state resistance 0.1max +0.1 1.27-0.1 Avalanche capability ratings +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 5 .2 8 -0+ 0.2.2 RDS(on) = 0.85 Ù MAX. (VGS = 10 V, ID = 5.0 A) 1 5 .2 5 -0+ 0.2.2 30 V 8 .7 -0+ 0.2.2 Gate voltage rating: 5 .6 0 QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 500 V Gate to Source Voltage VGSS 30 V Drain Current(DC) ID(DS) 10 A 40 A Drain Current(pulse) *1 Total Power Dissipation (TA = 25 ) ID(pulse) 1.5 PT W 85 Total Power Dissipation (TC = 25 ) Channel Temperature Tch 150 Storage temperature Tstg -55 to +150 Single Avalanche Current *2 IAS 10 A Single Avalanche Energy *2 EAS 10.7 mJ *1. PW 10ìs,Dduty cycle 1%. *2. Starting Tch = 25 , VDD = 150 V, RG = 25 Ù, VGS = 20 V 0V www.kexin.com.cn 1 Transistors IC SMD Type 2SK3325 Electrical Characteristics Ta = 25 Parameter Testconditons IDSS VDS = 500 V, VGS = 0 V Gate Leakage Current IGSS VGS = Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 2.0 RDS(on) VGS = 10 V, ID = 5.0 A Max Unit 100 ìA 100 2.5 3.5 4.0 0.68 nA V S 0.85 Ù 1200 pF 190 pF Crss 10 pF td(on) 21 ns tr 11 ns 40 ns Ciss Coss Feedback Capacitance Turn-on Delay Time Fall Time Typ 30 V, VDS = 0 V VDS = 10 V, ID = 5.0 A Yfs Output Capacitance Turn-off Delay Time Min VGS(off) VDS = 10 V, ID = 1 mA Input Capacitance Rise Time td(off) VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V,RG = 10 Ù, RL = 60 Ù tf 9.5 ns Total Gate Charge Qg 22 nC Gate-Source Charge Qgs 6.5 nC 7.5 nC 1.0 V 0.5 ìs 2.6 ìC Gate-Drain Charge 2 Symbol Drain Cut-off Current Qgd Diode Forward Voltage VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr www.kexin.com.cn VDD = 400 V, VGS = 10 V, ID = 10 A IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V, di/dt = 50 A / ìs