Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3628 TO-263 1 .2 7 -0+ 0.1.1 Features High-speed switching Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Avalanche energy capability guaranteed 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 No secondary breakdown 5 .6 0 Low ON resistance Ron +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 V Gate-source surrender voltage VGSS 30 V Drain current ID 20 A Peak drain current IDP 80 A Avalanche energy capability EAS 570 mJ Power dissipation Ta = 25 PD Power dissipation 3 W 100 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SK3628 Electrical Characteristics Ta = 25 Parameter Testconditons Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 Diode forward voltage VDSF IDR = 20 A, VGS = 0 Gate threshold voltage Vth VDS = 25 V, ID = 1 mA Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 IGSS VGS = Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Yfs V 1.7 65 7 Unit 14 -1.5 V 3.7 V 100 ìA 1 ìA 85 mÙ S pF pF 30 pF 100 V, ID = 15 A 35 ns RL = 6.7 Ù, VGS = 10 V 26 ns td(off) 220 ns tf 36 ns Reverse transfer capacitance Crss Turn-on delay time td(on) www.kexin.com.cn 230 30 V, VDS = 0 VDS = 25 V, ID = 10 A Max 330 Coss Fall time Typ 2300 Ciss Short-circuit output capacitance Turn-off delay time Min RDS(on) VGS = 10 V, ID = 10 A Short-circuit forward transfer capacitance Rise time 2 Symbol tr VDS = 25 V, VGS = 0, f = 1 MHz VDD