IC MOSFET SMD Type MOS Field Effect Transistor 2SK3638 TO-252 Low Ciss: Ciss = 1100 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 MAX. (VGS = 4.5 V, ID = 18 A) +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 15 m Unit: mm +0.1 2.30-0.1 +0.25 2.65-0.1 MAX. (VGS = 10 V, ID = 32 A) +0.2 9.70-0.2 RDS(on)1 = 8.5 m +0.15 0.50-0.15 Low on-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.28 1.50-0.1 Features 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 20 V Gate to source voltage VGSS Drain current Power dissipation TC=25 20 V ID 64 A Idp * 220 A 36 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=20V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 12 Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Typ Max Unit 10 A 10 A 2.5 V Yfs VDS=10V,ID=32A RDS(on)1 VGS=10V,ID=32A 6.8 8.5 m RDS(on)2 VGS=4.5V,ID=18A 10 15 m Ciss VDS=10V,VGS=0,f=1MHZ 25 S 1100 pF Output capacitance Coss 450 pF Reverse transfer capacitance Crss 170 pF Turn-on delay time ton 10 ns Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD ID=32A,VGS(on)=10V,RG=0 ,VDD=10V VDD = 16V VGS = 10 V ID =64A 4.3 ns 35 ns 9.7 ns 22 nC 4.3 nC 5.1 nC www.kexin.com.cn 1