Diodes SMD Type Silicon PIN Diodes BAR50-03W SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz +0.1 2.6-0.1 1.0max Especially useful as antenna switch in mobile communication 0.475 Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) 0.375 +0.05 0.1-0.02 VLow forward resitance Very low harmonics A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r D io d e re v e rs e v o lta g e F o rw a rd c u rre n t T o ta l p o w e r d is s ip a tio n TS J u n c tio n te m p e ra tu re 116 S ym bol V a lu e U n it VR 50 V IF 100 mA P to t 250 mW Tj 150 O p e ra tin g te m p e ra tu re ra n g e To p -5 5 to + 1 2 5 S to ra g e te m p e ra tu re ra n g e T s tg -5 5 to + 1 5 0 J u n c tio n - s o ld e rin g p o in t 1) R th J S 135 K /W www.kexin.com.cn 1 Diodes SMD Type BAR50-03W Electrical Characteristics Ta = 25 Symbol Conditions Reverse current Parameter IR VR = 50 V Forward voltage VF IF = 50 mA 0.95 VR = 1 V, f = 1 MHz 0.24 0.5 VR = 5 V, f = 1 MHz 0.2 0.4 VR = 0 V, f = 100 MHz 0.2 VR = 0 V, f = 1...1.8 GHz, all other 0.15 VR = 0 V, f = 100 MHz 25 Diode capacitance CT Reverse parallel resistance Forward resistance Rp rf Charge carrier life time Min Typ VR = 0 V, f = 1 GHz 6 VR = 0 V, f = 1.8 GHz 5 Max Unit 50 nA 1.1 V K IF = 0.5 mA, f = 100 MHz 25 40 IF = 1 mA, f = 100 MHz 16.5 25 IF = 10 mA, f = 100 MHz 3 4.5 IF = 10 mA, IR = 6 mA,measured at rr pF 1100 ns 56 ìm IR = 3 mA,RL = 100 I-region width WI |S21|2 Insertion loss |S21|2 Isolation Marking Marking 2 blue A www.kexin.com.cn IF = 3 mA, f = 1.8 GHz -0.56 IF = 5 mA, f = 1.8 GHz -0.4 IF = 18 mA, f = 1.8 GHz -0.27 VR = 0 V, f = 0.9 GHz -24.5 VR = 0 V, f = 1.8 GHz -20 VR = 0 V, f = 2.45 GHz -18 VR = 0 V, f = 5.6 GHz -12 dB dB