Diodes SMD Type High-speed diode BAS16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High switching speed: max. 4ns 0.55 Small plastic SMD package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage: max. 75 V +0.05 0.1-0.01 +0.1 0.97-0.1 Repetitive peak reverse voltage: max. 85 V 0-0.1 1.Base 2.Emitter +0.1 0.38-0.1 Repetitive peak forward current: max. 500 mA. 3.collector Absolute Maximum Ratings Ta = 25 Parameter repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol Max Unit VRRM Conditions 60 V VR 60 V IF Note 1 IFRM IFSM Ptot Storage temperature Tstg Junction temperature Tj mA mA t=1 s 4 t = 1 ms 1 t=1s Total power dissipation 250 600 prior to surge; square wave; Tj =25 Non-repetitive peak forward current Min Tmab = 25 A 0.5 250 ; Note 1 -65 mW +150 150 Note 1. Device mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Diodes SMD Type High-speed diode BAS16 Electrical Characteristics Ta = 25 Parameter Symbol VF Forward voltage Conditions Max IF = 1 mA; 715 IF = 10 mA; 855 IF = 50 mA; 1 IF = 100 mA; 1.25 V R = 25 V; Reverse current V R = 75 V; Cd Reverse recovery time trr Marking Marking 2 A6p www.kexin.com.cn Vf r V 30 nA 1 A 30 A V R = 75 V; T j = 150 50 A 1.5 pF 4 ns 1.75 V f = 1 MHz; V R = 0; when switched from IF = 10 mA to IR = 10 mA; R L = 100 Forward recovery voltage mV V R = 75 V; T j = 150 IR Diode capacitance Unit ;measured at IR =1 mA; when switched from IF = 10 mA;tr = 20 ns;