Diodes SMD Type SILICON SWICHING DIODE BAS16-03W SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features For high-speed Switching applications +0.1 2.6-0.1 0.375 +0.05 0.1-0.02 0.475 1.0max Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Diode reverse voltage VR 80 Peak reverse voltage V RM 85 IF 250 Forward current Non-repetitive peak surge forward current Total power dissipation Junction Temperature Storage Temperature Junction soldering point(1) t = 1.0 Ts Unit V mA s IFSM 4.5 A 116 P tot 250 mW Tj , 150 T stg -65 to+150 R thJS 135 K/W Note: 1.For calculation of R thJA please refer to Application Note Thermal Resistance www.kexin.com.cn 1 Diodes SMD Type SILICON SWICHING DIODE BAS16-03W Electrical Characteristics Ta = 25 Param eter I (BR) = 100 Breakdown voltage A Sym bol Min V (BR) 85 V R = 75 V Reverse current V R = 25 V,T A = 150 IR Diode capacitance 1250 V R = 0; f = 1 MHz 2 B www.kexin.com.cn 1000 1200 I F = 10 m A,tp = 20 ns A 855 VF I F = 150 m A I F = 10 m A; I R = 10 m A; m easured at I R = 1m A, R L = 100 Marking 30 I F = 100 m A Reverse Recovery Tim e Marking V 715 I F = 10 m A Forward recovery voltage Unit 50 IF = 1 m A I F = 50 m A Max 0.1 V R = 75 V,T A = 150 Forward voltage Typ mV V fr 1.75 V CT 2 V t rr 4 nS