Diodes SMD Type Schottky barrier (double) diodes BAS70 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High breakdown voltage 0.55 Low forward current 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Guard ring protected +0.05 0.1-0.01 +0.1 0.97-0.1 Small plastic SMD package 0-0.1 +0.1 0.38-0.1 Low diode capacitance. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous reverse voltage Continuous forward current Max Unit VR Conditions Min 70 V IF 70 mA Repetitive peak forward current IFRM 70 mA Non-repetitive peak forward current IFSM 100 mA Storage temperature Tstg Junction temperature Tj Operating ambient temperature Tamb thermal resistance from junction to ambient Rth j-a tp 1 s; ä 0.5 tp < 10 ms -65 +150 150 -65 +150 500 K/W Electrical C haracteristics T a = 25 P aram eter S ym bol Forward voltage VF Reverse voltage leakage current IR Charge carrier life tim e (K rakauer m ethod) Diode capacitance Cd Conditions M ax Unit IF = 1 m A 410 mV I F = 10 m A 750 mV I F = 15 m A 1 V V R = 50 V ; note 1 100 nA V R = 70 V ; note 1 10 IF = 5 m A 100 A ps f = 1 M Hz; V R = 0; 2 pF Note 1. P ulse test: t p = 300 s; ä = 0.02 Marking Type BAS70 BAS70-04 BAS70-05 BAS70-06 BAS70-07 Marking 73* 74* 75* 76* 77p www.kexin.com.cn 1