KEXIN BAT17-04

Diodes
SMD Type
Silicon Schottky Diode
BAT17-04;BAT17-05;BAT17-06
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
For high-speed switching application
0.55
For mixer applications in VHF/UHF range
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a r a m e te r
S ym bol
D io d e r e v e r s e v o lta g e
F o rw a rd c u rre n t
V a lu e
U n it
VR
4
V
IF
130
mA
P to t
150
mW
T o ta l p o w e r d is s ip a tio n
B A T 1 7 -0 4 , B A T 1 7 -0 6 , T s
B A T 1 7 - 0 5 ,T s
61
46
J u n c tio n te m p e r a tu r e
Tj
150
O p e r a tin g te m p e r a tu r e r a n g e
T op
- 5 5 to + 1 2 5
S to r a g e te m p e r a tu r e
T s tg
- 5 5 to + 1 5 0
J u n c tio n - s o ld e r in g p o in t( N o te 1 )
B A T 1 7 -0 4 , B A T 1 7 -0 6
B A T 1 7 -0 5
R th J S
590
K /W
690
N o te
1 .F o r c a lc u la tio n o f R th J A p le a s e r e fe r to A p p lic a tio n N o te T h e r m a l R e s is ta n c e
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1
Diodes
SMD Type
BAT17-04;BAT17-05;BAT17-06
Electrical Characteristics Ta = 25
Parameter
Symbol
Breakdown voltage
Conditions
V (BR)
Reverse current
I(BR) = 10
IR
A
Min
Typ
VF
VR = 3 V
0.25
VR = 4 V
10
1.25
200
275
350
IF = 1 mA
250
340
450
IF = 10 mA
350
425
600
20
mV
0.4
0.55
0.75
pF
8
15
ÄV F
IF = 1 mA
CT
V R = 0 , f = 1 MHz
Differential forward resistance
RF
IF = 5 mA, f = 10 kHz
Note
1.ÄV F is the difference between lowest and highest VF in multiple diode component.
Marking
2
Type
BAT17-04
BAT17-05
BAT17-06
Marking
54s
55s
56s
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A
IF = 0.1 mA
Diode capacitance
Forward voltage matching(Note 1)
Unit
V
V R = 3 V, TA = 60
Forward voltage
Max
4
mV