Diodes SMD Type Silicon Schottky Diode BAT68;BAT68-04 BAT68-05;BAT68-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 For high-speed switching application 0.55 For mixer applications in VHF/UHF range +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it D io d e re v e rs e v o lta g e VR 8 V F o rw a rd c u rre n t IF 130 mA P to t 150 mW J u n c tio n te m p e ra tu re Tj 150 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 5 0 T o ta l p o w e r d is s ip a tio n BAT68, TS 77 B A T 6 8 -0 4 , B A T 6 8 -0 6 ,T S B A T 6 8 -0 5 ,T S 61 46 J u n c tio n - s o ld e rin g p o in t(N o te 1 ) BAT68 R th J S 490 B A T 6 8 -0 4 , B A T 6 8 -0 6 590 B A T 6 8 -0 5 690 K /W N o te 1 .F o r c a lc u la tio n o f R th J A p le a s e re fe r to A p p lic a tio n N o te T h e rm a l R e s is ta n c e www.kexin.com.cn 1 Diodes SMD Type BAT68;BAT68-04 BAT68-05;BAT68-06 Electrical Characteristics Ta = 25 Parameter Symbol Breakdown voltage Conditions V (BR) Reverse current I(BR) = 10 A Min Typ 8 0.1 1.2 V R = 1 V, TA = 60 Forward voltage IF = 1 mA VF IF = 10 mA 318 340 390 500 Diode capacitance CT V R = 0 , f = 1 MHz 1 Differential forward resistance RF IF = 5 mA, f = 10 kHz 10 Marking 2 340 Type BAT68 BAT68-04 BAT68-05 BAT68-06 Marking 83s 84s 85s 86s www.kexin.com.cn Unit V VR = 1 V IR Max A mV pF