Transistors IC SMD Type General Purpose Transistor BC817W Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage (IC = 10 mA) VCEO 45 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 500 mA Peak collector current ICM 1 A Peak base current IBM 200 mA mW Total power dissipation Ptot 200 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W www.kexin.com.cn 1 Transistors IC SMD Type BC817W Electrical Characteristics Ta = 25 Parameter Symbol ICBO Collector cutoff current Emitter cutoff current Testconditons BC817-16W IE = 0 A; VCB = 20 V;Tj = 150 IEBO IC = 0 A; VEB = 5 V Max nA 5 ìA 100 nA 100 600 100 250 160 400 BC817-40W 250 600 hFE IC = 100 mA; VCE = 1 V * Unit 100 BC817-25W Collector-emitter saturation voltage VCE(sat) IC = 500 mA; IB = 50 mA 700 mV Base-emitter voltage VBE IC = 500 mA; VCE = 1 V 1.2 V Collector capacitance CC IE = ie = 0 A; VCB = 10 V;f = 1 MHz Transition frequency fT IC = 10 mA; VCE = 5 V;f = 100 MHz * Pulse test: t 300ìs, D 2%. hFE Classification 2 Typ IE = 0 A; VCB = 20 V ICBO BC817W DC current gain Min TYPE BC817W BC817-16W BC817-25W BC817-40W Marking 6D 6A 6B 6C www.kexin.com.cn 3 100 pF MHz